FEATURES
● TO-92 Plastic-Encapsulate Transistors
● Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
● Collector-current 0.5A
● Collector-base Voltage 40V
● Operating and storage junction temperature range: -55OC to +150OC
● Marking Code: S9013 Pin Configuration C BE ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) ICEO Collector Cutoff Current (VCE=20Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0) ON CHARACTERISTICS 40 --- Vdc 25 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc hFE(1) DC Current Gain (IC=50mAdc, VCE=1.0Vdc) hFE(2) DC Current Gain (IC=500mAdc, VCE=1.0Vdc) VCE(sat) Collector-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) VBE(sat) Base-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) VEB Base- Emitter Voltage (IE=100mAdc) SMALL-SIGNAL CHARACTERISTICS 64 300 --40 --- ----- 0.6 Vdc --- 1.2 Vdc --- 1.
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