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S9013 - NPN Transistor

Key Features

  • High Collector Current. (IC= 500mA).
  • Complementary To S9012.
  • Excellent HFE Linearity.
  • Power dissipation. (PC=300mW). Pb Lead-free.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S9012.  Excellent HFE Linearity.  Power dissipation.(PC=300mW). Pb Lead-free APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking S9013 J3 Production specification S9013 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 5 500 300 -55 to +150 Units V V V mA mW ℃ C082 Rev.A www.gmesemi.