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S9012 - PNP Transistor

General Description

The S9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

Key Features

  • High total power dissipation. (PT:625mW).
  • High collector current. (IC:500mA).
  • Complementary to S9013.
  • Excellent linearity. Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature +150°C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 40 V VCEO Collector to Emitter Voltage 20 V VEBO Emitter.

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Datasheet Details

Part number S9012
Manufacturer TGS
File Size 37.34 KB
Description PNP Transistor
Datasheet download datasheet S9012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIGER ELECTRONIC CO.,LTD S9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The S9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features • High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excellent linearity. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................... -55~+150°C Junction Temperature ................................................................................................. +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)..............................................................................................