S9018 Datasheet | Galaxy Microelectronics

Production specification Silicon Epitaxial Planar Transistor Features - High current gain bandwidth product. - power dissipation.(PC=200mW). Pb Lead-free APPLICATIONS - NPN epitaxial silicon transistor. ORDERING INFORMATION Type No. Marking J8 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 25 18 4 50 200 -55 to +150 V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test...