Galaxy Century Microelectronics S9018
Silicon Epitaxial Planar Transistor
| Part No. | S9018 |
|---|---|
| Datasheet | S9018 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High current gain bandwidth product.● power dissipation.(PC=200mW). Pb Lead-free S9018
APPLICATIONS
● NPN epitaxial silicon transistor. ORDERING INFORMATION Type No. Marking S9018 J8 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 25 18 4 50 200 -55 to +150 V V V mA mW ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=100μA,IE=0 IC=0.1mA,IB=0 IE=-100μA,IC=0 25 18 4 Collector cut-off current Collector cut-off current Emitter cut-off current ICBO VC
