Galaxy Century Microelectronics S9012
PNP Transistor
| Part No. | S9012 |
|---|---|
| Datasheet | S9012 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
z High Collector Current.(IC= -500mA） z Complementary To S9013. z Excellent HFE Linearity. Pb Lead-freeAPPLICATIONS
z High Collector Current. ORDERING INFORMATION Type No. Marking S9012 2T1 Production specification S9012 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -40 -25 -5 -500 300 -55 to +150 Units V V V mA mW ℃ C081 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor S9012ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-100μA,IE=0 I
