S9012
S9012 is PNP Transistor manufactured by Galaxy Microelectronics.
PNP Silicon Epitaxial Planar Transistor
Features z High Collector Current.(IC= -500m A） z plementary To S9013. z Excellent HFE Linearity.
Pb
Lead-free
APPLICATIONS z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
2T1
Production specification
SOT-23 Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
-40 -25 -5 -500 300 -55 to +150
Units V V V m A m W ℃
C081 Rev.A
.gmicroelec. 1
Production specification
PNP Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO...
