BL S9012
PNP Silicon Transistor
| Part No. | S9012 |
|---|---|
| Datasheet | S9012 Download |
| Manufacturer |  BL |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity. Production specification S9012 Pb Lead-freeAPPLICATIONS
z High Collector Current. SOT-23 ORDERING INFORMATION Type No. S9012 Marking 2T1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -25 -5 -500 300 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC081 Rev.A 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Production specification S9012 MIN -40 -25 -5 -0.1 -0.1 -0.1 120 400 -0.6 -1.2 150 5 V V MHz pFELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat...
