Weitron Technology S9012
PNP General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PCM Tj Tstg Value -25 -40 -5 -500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C CELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= -20 Vdc, IB =0) Collector Cutoff Current (VCB= -40 Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0V d c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min -25 -40 -5 - Max -0.1 -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON S9012ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) (IC= -500 mAdc, VCE= -1...