Galaxy Century Microelectronics S9015
Silicon Transistor
| Part No. | S9015 |
|---|---|
| Datasheet | S9015 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Complementary To S9014.● Excellent HFE Linearity.
● Power dissipation.(PC=0.2W) Pb Lead-free
APPLICATIONS
● Low frequency , low noise amplifier. ORDERING INFORMATION Type No. Marking S9015 M6 Production specification S9015 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -45 -5 IC PC Tj,Tstg Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -100 200 -55 to +150 Units V V V mA mW ℃ C084 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor S9015ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -45 V
