SeCoS Halbleitertechnologie GmbH S9015
PNP Silicon Transistor
FEATURES
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 33 Power dissipation PCM : 0.2 W Collector Current ICM : -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150OC V 1 2 A L 3 Top View 12 G 1 Base BS 2 Emitter C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mmELECTRICAL CHARACTERISTICS
( Tamp.=25OC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) Test condit