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S9013 - NPN Transistor

General Description

Excellent hFE linearity Complement to PNP Type S9012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Em

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent hFE linearity ·Complement to PNP Type S9012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range S9013 VALUE 40 25 5 500 625 150 -55~150 UNIT V V V mA mW ℃ ℃ isc website：www.iscsemi.