S9013 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor S9013 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO V(BR)CEO V(BR)EBO Collector-base breakdown voltage IC= 100μA , IE=0 Collector-Emitter Voltage Breakdown IC= 1mA ; IB= 0 Emitter-base breakdown voltage IE= 100μA , IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation...



