Inchange Semiconductor S9012
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | S9012 |
|---|---|
| Datasheet | S9012 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent hFE linearity●Complement to NPN Type S9013
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range S9012 VALUE -40 -25 -5 -500 625 150 -55~150 UNIT V V V mA mW ℃ ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor S9012ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC= -100μA , IE=0 -40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -25 V V(BR)EBO Emitter-base breakdown voltage IE= -100μA , IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA -0.6 V VBE(sat)...