| Part number | S9012 |
|---|---|
| Download | S9012 Datasheet (PDF) |
| File Size | 197.54 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
S9012 | PNP Epitaxial Silicon Transistor |
Weitron Technology |
S9012 | PNP General Purpose Transistors |
BL |
S9012 | PNP Silicon Transistor |
SeCoS Halbleitertechnologie GmbH |
S9012 | PNP Silicon Transistor |
TGS |
S9012 | PNP Transistor |
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor S9012 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC= -100μA , IE=0 -40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -25 V V(BR)EBO Emitter-base breakdown voltage IE= -100μA , IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA;.
