Galaxy Century Microelectronics S9014
Silicon Epitaxial Planar Transistor
| Part No. | S9014 |
|---|---|
| Datasheet | S9014 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Complementary To S9015.● Excellent HFE Linearity.
● Power dissipation.(PC=0.2W) Pb Lead-free
APPLICATIONS
● Per-Amplifier low level & low noise. ORDERING INFORMATION Type No. Marking S9014 J6 Production specification S9014 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 50 45 5 100 200 -55 to +150 Units V V V mA mW ℃ C083 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor S9014ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 45 V Emitter-base b
