SeCoS Halbleitertechnologie GmbH S9014
NPN Transistor
FEATURES
3 SOT-23 Collector 3 1 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Power dissipation PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage 1 2 Base A L 3 2 Emitter V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C O O Top View 1 2 B S V G C D H K J All Dimension in mmELECTRICAL CHARACTERISTICS
( Tamp.=25 C unless otherwise specified) O Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Test conditions IE=0 MIN 50 45 5 TYP MAX UNIT V V V Ic= 100μA, Ic= 0.1mA, IB=0 IE=100μA, IC=0 VCB=50 V , IE=0 VCE=35V , VEB= 3V , VCE=5V, IB=0...