Weitron Technology S9014
NPN General Purpose Transistors
| Part No. | S9014 |
|---|---|
| Datasheet | S9014 Download |
| Manufacturer |  Weitron Technology |
| Description | NPN General Purpose Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C CELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 50 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0V d c, I C=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 45 50 5.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON S9014ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WEITRON Max Unit On Characteristics DC Current Gain (IC= 1mAdc, VCE=5Vdc) HFE VCE(sat) 60 1000 - Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Base-Emitter Saturation...
