BL S9014
Silicon Epitaxial Planar Transistor
| Part No. | S9014 |
|---|---|
| Datasheet | S9014 Download |
| Manufacturer |  BL |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
z z z Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-freeAPPLICATIONS
z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. S9014 Marking J6 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 50 45 5 100 200 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC083 Rev.A 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification S9014ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions IC=100μA,IE=0 IC=0.1mA,IB=0 B MIN 50 45 5 TYP MAX UNIT V V V Emitter-base break...
