Galaxy Century Microelectronics S9016
NPN Silicon Epitaxial Planar Transistor
| Part No. | S9016 |
|---|---|
| Datasheet | S9016 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Collector Current.(IC= 25mA）● Power dissipation.(PC=200mW)
APPLICATIONS
Pb Lead-free● AM converter, FM/RM amplifier of low noise. Production specification S9016 ORDERING INFORMATION Type No. Marking S9016 Y6 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 20 Units V V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 25 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ C127 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor S9016
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collec
