SPP24N60C3 Description
· Ultra low gate charge · Ultra low effective capacitance · Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 24.3 IDM Drain Current-Single Pulsed 72.9 PD Total Dissipation @TC=25℃ 240 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1.2mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPP24N60C3 Key Features
- Static drain-source on-resistance
- DESCRIPTION
- Ultra low gate charge
- Ultra low effective capacitance
- Improved transconductance