STB14NM50N-2 Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

STB14NM50N-2 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	STB14NM50N-2
Manufacturer	Inchange Semiconductor
File Size	265.22 KB
Description	N-Channel MOSFET
Datasheet	STB14NM50N-2 Datasheet

General Description

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±25 V 12 A 48 A 90 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.39 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB14NM50N-2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;

Overview

isc N-Channel MOSFET Transistor STB14NM50N-2.

Key Features

Drain Current.
ID= 12A@ TC=25℃.
Drain Source Voltage- : VDSS= 500V(Min).
Static Drain-Source On-Resistance : RDS(on) = 320mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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