Datasheet Details
| Part number | STB20NM60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 264.84 KB |
| Description | N-Channel MOSFET |
| Download | STB20NM60 Download (PDF) |
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| Part number | STB20NM60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 264.84 KB |
| Description | N-Channel MOSFET |
| Download | STB20NM60 Download (PDF) |
|
|
|
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 20 A 80 A 192 W -65~150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.65 UNIT ℃/W STB20NM60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB20NM60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STB20NM60 | N-CHANNEL POWER MOSFET | ST Microelectronics |
 |
STB20NM60 | N-Channel 650V Power MOSFET | VBsemi |
|
STB20NM60-1 | N-CHANNEL POWER MOSFET | ST Microelectronics |
|
STB20NM60A-1 | N-CHANNEL POWER MOSFET | ST Microelectronics |
 |
STB20NM60D | Power MOSFET | STMicroelectronics |
| Part Number | Description |
|---|---|
| STB20NM60-1 | N-Channel MOSFET |
| STB20NM60D | N-Channel MOSFET |
| STB20NM50 | N-Channel MOSFET |
| STB20NM50-1 | N-Channel MOSFET |
| STB20NM50FD | N-Channel MOSFET |
| STB20N65M5 | N-Channel MOSFET |
| STB21N65M5 | N-Channel MOSFET |
| STB21NM60ND | N-Channel MOSFET |
| STB22NM60N | N-Channel MOSFET |
| STB23NM50N | N-Channel MOSFET |