STD5NM50T4 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤0.8Ω
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
<.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Volt.
Image gallery