STH150N10F7-2 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	STH150N10F7-2
Manufacturer	INCHANGE
File Size	264.91 KB
Description	N-Channel MOSFET
Datasheet	STH150N10F7-2-INCHANGE.pdf

STH150N10F7-2 Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 100 V ±20 V 110 A 440 A 250 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistan

Features

Drain Current.
ID= 110A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 7, 2020 |