STH150N10F7-2
STH150N10F7-2 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
N-channel 100 V, 0.0034 Ω typ., 110 A, STrip FET™ F7 Power MOSFET in a H2PAK-2 package
- production data
2 3
H2PAK-2
Features
Order code
VDS RDS(on)max ID PTOT
STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
- Among the lowest RDS(on) on the market
- Excellent figure of merit (Fo M)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Figure 1. Internal schematic diagram
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Description
This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Order code STH150N10F7-2
September 2016
Table 1. Device summary
Marking
Package
150N10F7
H2PAK-2
Doc ID025859 Rev 3
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