Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Order code STH150N10F7-2
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Features
- Order code
VDS RDS(on)max ID PTOT
STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W.
- Among the lowest RDS(on) on the market.
- Excellent figure of merit (FoM).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness.
STH150N10F7-2 Datasheet
