STH150N10F7-2 - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STH150N10F7-2
Manufacturer	STMicroelectronics
File Size	932.34 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STH150N10F7-2 Datasheet
Additional preview pages of the STH150N10F7-2 datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STH150N10F7-2 September 2016 Table 1. Device summary Marking Package 150N10F7 H2PAK-2 DocID025859 Rev 3 Packaging Tape and reel 1/16 www.st.com Contents Contents STH150N10F7-2 1 Electrical ratings

Features

Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 22, 2019 |