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STH150N10F7-2 - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

 6  $0Y Order code STH150N10F7-2 S

Key Features

  • Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STH150N10F7-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package Datasheet − production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. *  6  $0Y Order code STH150N10F7-2 September 2016 Table 1.