Datasheet4U Logo Datasheet4U.com

STH150N10F7-2 - N-Channel MOSFET

General Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Key Features

  • Drain Current.
  • ID= 110A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STH150N10F7-2 N-CHANNEL POWER MOSFET STMicroelectronics
STH15810-2 N-channel Power MOSFET STMicroelectronics
STH15N50 N-CHANNEL Power MOS MOSFET STMicroelectronics
STH15N50FI N-CHANNEL Power MOS MOSFET STMicroelectronics
STH15NA50 N-CHANNEL Power MOS MOSFET ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STH110N10F7-2 N-Channel MOSFET
STH130N8F7-2 N-Channel MOSFET
STH140N6F7-2 N-Channel MOSFET
STH140N8F7-2 N-Channel MOSFET
STH170N8F7-2 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor STH150N10F7-2 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.