STP100N6F7 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	STP100N6F7
Manufacturer	INCHANGE
File Size	271.30 KB
Description	N-Channel MOSFET
Datasheet	STP100N6F7-INCHANGE.pdf

STP100N6F7 Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 60 V ±20 V 100 A 400 A 125 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistanc

Features

Drain Current.
ID= 100A@ TC=25℃.
Drain Source Voltage- : VDSS= 60V(Min).
Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 9, 2020 |