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STP11NM60 - N-Channel MOSFET

Datasheet Summary

Features

  • Typical RDS(on)=0.4Ω.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STP11NM60

Datasheet Details

Part number STP11NM60
Manufacturer INCHANGE
File Size 201.20 KB
Description N-Channel MOSFET
Datasheet download datasheet STP11NM60 Datasheet
Additional preview pages of the STP11NM60 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 ·FEATURES ·Typical RDS(on)=0.4Ω ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 44 PD Total Dissipation 160 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
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