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STP11NM60FD Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1 VDSS 600 600 600 600 V V V V RDS(on) < < < < 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11 A 11 A 11 A 11 A 1 3 2 1 3 2 TYPICAL RDS(on) = 0.

General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.

It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

TO-220 TO-220FP 3 1 3 12 D2PAK I2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDER CODES PART NUMBER STP11NM60FD STP11NM60FDFP STB11NM60FDT4 STB11NM60FD-1 MARKING P11NM60FD P11NM60FDFP B11NM60FD B11NM60FD PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE February 2004 1/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP11NM60FD STB11NM60FD STB11NM60FD-1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.

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