P11NM60FP Datasheet | STMicroelectronics

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature TO-220 TO-220FP 3 1 D PAK 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM Value STP(B)11NM60(-1) 600 600 ±30 11 7 44 160 1.28 15 -- 65 to 150 150 (- )Limited only by maximum temperature allowed (1)ISD<11A, di/dt<400A/µs, VDD<V (BR)DSS, T J<TJMAX Unit STP11NM60FP V V V 11 (- ) 7 (- ) 44 (- ) 35 0.28 2500 A A A W W/°C V/ns V °C °C 1/12 (- )Pulse width limited by safe operating area Free Datasheet http://../ STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 THERMAL DATA TO-220/D2PAK/I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.78 62.5 300 TO-220FP 3.57 °C/W °C/W °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5.5 350 Unit A m J ELECTRICAL...