P11NM60 Datasheet | STMicroelectronics

features .. Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 - - - - 11A 11A 11A 11A TO-220 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 12 D2PAK i2PAK Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products. Internal schematic diagram Applications - Switching application Order codes Part number STB11NM60T4 STB11NM60-1 STP11NM60 STP11NM60FP Marking B11NM60 B11NM60-1 P11NM60 P11NM60FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube January 2007 Rev 6 1/16 .st. 16 Contents STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Contents 1 2 Electrical ratings - - - - - - - - . . . . 3 Electrical characteristics - - -...