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P11NM60 - N-CHANNEL Power MOSFET

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • www. DataSheet4U. com Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on).

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P11NM60FP STP11NM60FP
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Full PDF Text Transcription (Reference)

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STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET General features www.DataSheet4U.com Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 ■ ■ ■ ■ 11A 11A 11A 11A TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 3 12 D2PAK i2PAK Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.