P11NM60N Datasheet | STMicroelectronics

Features Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Application - Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK I²PAK 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic...