Datasheet Summary
N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package
Features
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
650 V
450 mΩ
10 A
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
Applications
- Switching applications
G(1)
Description
S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using
AM01475v1_noZen
MDmesh II technology. Utilizing a new strip-layout vertical structure, this device Features low on-resistance and superior switching performance. It is ideal for bridge...
