STP11NM60ND Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220.

Datasheet Details

Part number	STP11NM60ND
Manufacturer	STMicroelectronics
File Size	619.08 KB
Description	N-Channel Power MOSFET
Datasheet	STP11NM60ND_STMicroelectronics.pdf

S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology.

Utilizing a new strip-layout vertical structure, this device

TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 450 mΩ 10 A.
Fast-recovery body diode.
Low gate charge and input capacitance.
Low on-resistance RDS(on).
100% avalanche tested.
High dv/dt ruggedness.

Part Number	Description	Manufacturer
STP11NM60ND	N-Channel MOSFET	INCHANGE
STP11NM60N	N-CHANNEL Power MOSFET	ST Microelectronics
STP11NM60N	N-Channel MOSFET	INCHANGE
STP11NM60	N-CHANNEL Power MOSFET	ST Microelectronics
STP11NM60	N-Channel MOSFET	INCHANGE