STP11NM65N
Overview
- 100% avalanche tested d D(2, TAB)
- Low input capacitance and gate charge ro
- Low gate input resistance te P Applications ole G(1)
- Switching applications bs Description O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. olete Prod Product status links ObsSTF11NM65N
