STMicroelectronics STP11NM65N
N-channel MOSFET
| Part No. | STP11NM65N |
|---|---|
| Datasheet | STP11NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N● 100% avalanche tested d D(2, TAB)
● Low input capacitance and gate charge ro
● Low gate input resistance te P
APPLICATIONS
ole G(1)● Switching applications bs
DESCRIPTION
O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. olete Prod Product status links ObsSTF11NM65N STFI11NM65N STP11NM65N DS14294 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. STF11NM65N, STFI11NM65N, STP11NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value U...
