STP11NM65N Description
O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
STP11NM65N Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance