| Part Number | STP11NM65N |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
O S(3)
uct(s) - AM01475v1_noZen
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure.
123
TO-220FP
TO-2201 23
Order codes STF11NM65N
VDS
RDS(on) max.
ID
t(s) 123
I2PAKFP
uc (TO-281)
STFI11NM65N
650 V
455 mΩ
11 A
STP11NM65N
* 100% avalanche tested d D(2, TAB) * Low input capacitance and gate charge ro * Low gate input resistance te P Applications ole G(1) * Switchin. |
STP11NM65N Datasheet
The STP11NM65N is a N-channel MOSFET.
| Part Number | STP11NM65N |
|---|---|
| Description | TO-220 N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
STP11NM65N
FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.455Ω(Max) ·100% avalanch.
*Drain Current *ID= 44A@ TC=25℃ *Drain Source Voltage- : VDSS= 650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switching application ABSOLUTE MAXIMUM RATING. |
| Part Number | STP11NM65N |
|---|---|
| Description | TO-220F N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
STP11NM65N
FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.455Ω(Max) ·100% avalanch.
*Drain Current *ID= 44A@ TC=25℃ *Drain Source Voltage- : VDSS= 650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switching application ABSOLUTE MAXIMUM RATING. |