| Part Number | STP11NM60ND |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using
AM01475v1_noZen
MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-.
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP11NM60ND
650 V
450 mΩ
10 A
* Fast-recovery body diode * Low gate charge and input capacitance * Low on-resistance RDS(on) * 100% avalanche tested * High dv/dt ruggedness Applications * Switching applications G. |
STP11NM60ND Datasheet
The STP11NM60ND is a N-Channel Power MOSFET.
| Part Number | STP11NM60ND |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
STP11NM60ND
FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max) ·100% avalanc.
*Drain Current *ID= 6.3A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switching application ABSOLUTE MAXIMUM RATING. |