Datasheet Details
| Part number | STP25N10F7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 233.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | STP25N10F7-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor STP25N10F7.
| Part number | STP25N10F7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 233.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | STP25N10F7-INCHANGE.pdf |
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·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure.
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 100 V ±20 V 25 A 100 A 50 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX UNIT 3 ℃/W 62.5 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STP25N10F7 | N-CHANNEL POWER MOSFET | STMicroelectronics |
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