STMicroelectronics STP25N10F7
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STP25N10F7 |
|---|---|
| Datasheet | STP25N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V● Ultra low on-resistance
● 100% avalanche tested
APPLICATIONS
● Switching applications ' Ć7$% *DESCRIPTION
th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. 6 $0 Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1. Device summary Marking Package 25N10F7 25N10F7 25N10F7 DPAK TO-220FP TO-220 September 2013 This is information on a product in full production. DocID
