STP25N10F7 Description
·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature...
STP25N10F7 Key Features
- Drain Current -ID= 25A@ TC=25℃ -Drain Source Voltage