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STP6NK60Z Datasheet Preview

STP6NK60Z Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current ID= 6A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications in switching
power supplies and adaptors
INCHANGE Semiconductor
STP6NK60Z
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25
TC=100
6
3.8
A
ID(puls)
Pulse Drain Current
24
A
Ptot
Total Dissipation@TC=25
110
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.14 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

STP6NK60Z Datasheet Preview

STP6NK60Z Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
INCHANGE Semiconductor
STP6NK60Z
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
600
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250uA
3.0
4.5
V
VSD
Diode Forward On-Voltage
IS=6A ;VGS= 0
1.6
V
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VGS= 10V; ID=3A
VGS= ±20V;VDS= 0
VDS= 600V; VGS= 0 Tj=25
Tj=125
1
1.2
Ω
±10 uA
1
50
µA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number STP6NK60Z
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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