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STP6NK60Z - N-Channel MOSFET

Description

Drain Current ID= 6A@ TC=25℃ Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications in switching po

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications in switching power supplies and adaptors INCHANGE Semiconductor STP6NK60Z ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ TC=100℃ 6 3.8 A ID(puls) Pulse Drain Current 24 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max.
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