| Part Number | STP6NK60Z Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken.
Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z
VDSS 600 V 600 V 600 V 600 V
RDS(on) ID
PW
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 30 W
< 1.2 Ω 6 A 110 W
* Extremely high dv/dt capability * 100% avalanche tested * Gate charge minimized Application * Switching applications Descrip. |
STP6NK60Z Datasheet and Specifications PDF
The STP6NK60Z is a N-Channel MOSFET.
| Part Number | STP6NK60Z Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
nel MOSFET Transistor
*ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor STP6NK60Z SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250uA 3.0 4.5 V VSD Diode Forward On-V. |