Drain Current ID= 6A@ TC=25℃
Drain Source Voltage-
: VDSS= 600V(Min)
Fast Switching Speed
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high speed switching applications in switching po
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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications in switching power supplies and adaptors
INCHANGE Semiconductor
STP6NK60Z
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃ TC=100℃
6 3.8
A
ID(puls)
Pulse Drain Current
24
A
Ptot
Total Dissipation@TC=25℃
110
W
Tj
Max.
STP6NK60Z Datasheet
