Datasheet Details
| Part number | STW32NM50N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 342.91 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 STW32NM50N Datasheet
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| Part number | STW32NM50N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 342.91 KB |
| Description | N-Channel MOSFET |
| Datasheet |
STW32NM50N Datasheet
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·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 22 A ID(puls) Pulse Drain Current 88 A Ptot Total Dissipation@TC=25℃ 190 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.66 ℃/W STW32NM50N isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STW32NM50N ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STW32NM50N | N-channel MOSFET | STMicroelectronics |
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