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STW45NM60 - N-Channel MOSFET

Datasheet Summary

Features

  • High dv/dt and avalanche capabilities.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Tight process control and high manufacturing yields.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STW45NM60

Datasheet Details

Part number STW45NM60
Manufacturer INCHANGE
File Size 197.00 KB
Description N-Channel MOSFET
Datasheet download datasheet STW45NM60 Datasheet
Additional preview pages of the STW45NM60 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW45NM60 ·FEATURES ·High dv/dt and avalanche capabilities ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Tight process control and high manufacturing yields ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 45 28 180 PD Total Dissipation 417 Tch Max.
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