Datasheet4U Logo Datasheet4U.com

TIP105 - PNP Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -2.5V(Max)@ IC= -8A Complement to Type TIP100 Minimum Lot-to-Lot variations for robust

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP105 Darlington PNP Power Transistors TAITRON
TIP105 Power Transistors RECTRON
TIP105 PNP SILICON POWER DARLINGTONS Power Innovations Limited
TIP105 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
TIP105 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
TIP100 NPN Transistor
TIP101 NPN Transistor
TIP102 NPN Transistor
TIP106 PNP Transistor
TIP107 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor TIP105 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -2.