High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
Complement to Type TIP137
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general-purpose am
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP137 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃ Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
0.
TIP132 Datasheet
