Datasheet4U Logo Datasheet4U.com

TIP135 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor TIP135.

General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·plement to Type TIP130 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current- Continuous Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature -0.3 A 70 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A;

IB= -16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB= -30mA VBE(on) Base-Emitter On Voltage IC= -4A;

TIP135 Distributor