TIP145T - PNP Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Complement to Type TIP140T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier a

📥 Download Datasheet

TIP145T pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	TIP145T
Manufacturer	Inchange Semiconductor
File Size	211.67 KB
Description	PNP Transistor
Datasheet	TIP145T Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TIP145T	Monolithic Construction	SemiHow
TIP145T	PNP Epitaxial Silicon Darlington Transistor	Fairchild Semiconductor
TIP145	Darlington Complementary Silicon Power Transistors	ON Semiconductor
TIP145	PNP TRANSISTORS	CDIL
TIP145	PNP SILICON POWER DARLINGTONS	Power Innovations Limited

Other Datasheets by Inchange Semiconductor

Part Number	Description
TIP145	PNP Transistor
TIP140	NPN Transistor
TIP141	NPN Transistor
TIP141T	NPN Transistor
TIP142T	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Complement to Type TIP140T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.