Datasheet4U Logo Datasheet4U.com

TIP151 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation TIP151 APPLICATIONS Designed for use in automotive ignition,switch

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP151 NPN SILICON POWER DARLINGTONS Power Innovations Limited
TIP151 (TIP150 - TIP152) SILICON POWER TRANSISTOR SavantIC
TIP151 Silicon NPN Power Darlington Transistor NTE
TIP150 NPN SILICON POWER DARLINGTONS Power Innovations Limited
TIP150 (TIP150 - TIP152) SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
TIP150 NPN Transistor
TIP152 NPN Transistor
TIP100 NPN Transistor
TIP101 NPN Transistor
TIP102 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TIP151 APPLICATIONS ·Designed for use in automotive ignition,switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.