TIP29 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 0.7V(Max.)@IC= 1.0A Complement to Type TIP30 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in g

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Datasheet Details

Part number	TIP29
Manufacturer	Inchange Semiconductor
File Size	205.53 KB
Description	NPN Transistor
Datasheet	TIP29 Datasheet

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pulse 3 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 0.