Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)
Collector-Emitter Saturation Voltage: VCE(sat) = -0.7V(Max.)@IC= -1.0A
Complement to Type TIP29
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in ge
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isc Silicon PNP Power Transistors
TIP30
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)
·Collector-Emitter Saturation Voltage: VCE(sat) = -0.7V(Max.)@IC= -1.0A
·Complement to Type TIP29 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-base Voltage
-40
V
VCEO Collector-emitter Voltage
-40
V
VEBO
Emitter-base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Pulse
-3
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-0.
TIP30 Datasheet
