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TIP3055F - NPN Transistor

General Description

·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 90 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.39 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification TIP3055F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ;

VCE= 4V ICEO Collector Cutoff Current VCE= 30V;

Overview

isc Silicon NPN Power Transistor isc Product Specification TIP3055F.