TIP3055F - NPN Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type TIP2955F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

📥 Download Datasheet

TIP3055F npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	TIP3055F
Manufacturer	Inchange Semiconductor
File Size	198.49 KB
Description	NPN Transistor
Datasheet	TIP3055F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TIP3055	NPN Silicon Power Transistors	ON Semiconductor
TIP3055	POWER TRANSISTORS	Motorola
TIP3055	Complementary power transistors	STMicroelectronics
TIP3055	(TIP2955 / TIP3055) Silicon Power Transistors	Comset Semiconductors
TIP3055T	Silicon NPN Power Transistor	Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
TIP3055	NPN Transistor
TIP30	PNP Transistor
TIP30A	PNP Transistor
TIP30B	PNP Transistor
TIP30C	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor isc Product Specification TIP3055F DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.