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TIP30B - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = -0.7V(Max.)@IC= -1.0A Complement to Type TIP29B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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isc Silicon PNP Power Transistors TIP30B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) = -0.7V(Max.)@IC= -1.0A ·Complement to Type TIP29B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-base Voltage -80 V VCEO Collector-emitter Voltage -80 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Pulse -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.